RN2107MFV,L3F
RN2107MFV,L3F
Onderdeel nummer:
RN2107MFV,L3F
Fabrikant:
Toshiba Semiconductor and Storage
Beschrijving:
TRANS PREBIAS NPN
RoHS-status:
Loodvrij / RoHS-conform
hoeveelheid in voorraad:
59804 Pieces
Aflevertijd:
1-2 days (We have stocks to ship now)
Productie tijd:
4-8 weeks
Data papier:
RN2107MFV,L3F.pdf

Invoering

We can supply RN2107MFV,L3F, use the request quote form to request RN2107MFV,L3F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN2107MFV,L3F.The price and lead time for RN2107MFV,L3F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN2107MFV,L3F.We look forward to working with you to establish long-term relations of cooperation

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Intern onderdeelnummer RO-RN2107MFV,L3F
Staat Original New
Land van oorsprong Contact us
Top Markering email us
Vervanging See datasheet
Spanning - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
transistor Type:PNP - Pre-Biased
Leverancier Device Pakket:VESM
Serie:-
Weerstand - emitterbasis (R2):47 kOhms
Weerstand - basis (R1):10 kOhms
Vermogen - Max:150mW
Packaging:Bulk
Verpakking / doos:SOT-723
Andere namen:RN2107MFV,L3F(B
RN2107MFV,L3F(T
RN2107MFVL3F
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
gedetailleerde beschrijving:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA
Email:[email protected]

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