R6007ENJTL
R6007ENJTL
Part Number:
R6007ENJTL
Manufacturer:
LAPIS Semiconductor
Description:
MOSFET N-CH 600V 7A LPT
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
39100 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
1.R6007ENJTL.pdf2.R6007ENJTL.pdf

Introduction

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Specifications

Internal Part Number RO-R6007ENJTL
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Vgs(th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:LPTS (D2PAK)
Series:-
Rds On (Max) @ Id, Vgs:620 mOhm @ 2.4A, 10V
Power Dissipation (Max):40W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:R6007ENJTLTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:17 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:390pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 7A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK)
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Email:[email protected]

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