R6004KNJTL
R6004KNJTL
Part Number:
R6004KNJTL
Manufacturer:
LAPIS Semiconductor
Description:
MOSFET N-CHANNEL 600V 4A TO263
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
62211 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
1.R6004KNJTL.pdf2.R6004KNJTL.pdf

Introduction

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Specifications

Internal Part Number RO-R6004KNJTL
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Vgs(th) (Max) @ Id:5V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-263
Series:-
Rds On (Max) @ Id, Vgs:980 mOhm @ 1.5A, 10V
Power Dissipation (Max):58W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:R6004KNJTLTR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:17 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:280pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:10.2nC @ 10V
FET Type:N-Channel
FET Feature:Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 4A (Tc) 58W (Tc) Surface Mount TO-263
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Email:[email protected]

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