TPCC8006-H(TE12LQM
TPCC8006-H(TE12LQM
Nomor bagian:
TPCC8006-H(TE12LQM
Pabrikan:
Toshiba Semiconductor and Storage
Deskripsi:
MOSFET N-CH 30V 22A 8TSON
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
80058 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
1.TPCC8006-H(TE12LQM.pdf2.TPCC8006-H(TE12LQM.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-TPCC8006-H(TE12LQM
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:2.3V @ 200µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:8-TSON Advance (3.3x3.3)
Seri:U-MOSVI-H
Rds Pada (Max) @ Id, Vgs:8 mOhm @ 11A, 10V
Power Disipasi (Max):700mW (Ta), 27W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:8-PowerVDFN
Nama lain:TPCC8006-H(TE12LQMTR
TPCC8006HTE12LQM
Suhu Operasional:150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:2200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):4.5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):30V
Detil Deskripsi:N-Channel 30V 22A (Ta) 700mW (Ta), 27W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Current - Continuous Drain (Id) @ 25 ° C:22A (Ta)
Email:[email protected]

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