SIZ910DT-T1-GE3
SIZ910DT-T1-GE3
型號:
SIZ910DT-T1-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET 2N-CH 30V 40A POWERPAIR
RoHS狀態:
無鉛/符合RoHS
庫存數量:
76763 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
SIZ910DT-T1-GE3.pdf

簡單介紹

We can supply SIZ910DT-T1-GE3, use the request quote form to request SIZ910DT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIZ910DT-T1-GE3.The price and lead time for SIZ910DT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIZ910DT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SIZ910DT-T1-GE3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:2.2V @ 250µA
供應商設備封裝:8-PowerPair® (6x5)
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:5.8 mOhm @ 20A, 10V
功率 - 最大:48W, 100W
封装:Cut Tape (CT)
封裝/箱體:8-PowerWDFN
其他名稱:SIZ910DT-T1-GE3CT
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:1500pF @ 15V
柵極電荷(Qg)(Max)@ Vgs:40nC @ 10V
FET型:2 N-Channel (Half Bridge)
FET特點:Logic Level Gate
漏極至源極電壓(Vdss):30V
詳細說明:Mosfet Array 2 N-Channel (Half Bridge) 30V 40A 48W, 100W Surface Mount 8-PowerPair® (6x5)
電流 - 25°C連續排水(Id):40A
基礎部件號:SIZ910
Email:[email protected]

快速詢價

型號
數量
公司
邮箱
電話
要求