SIR164DP-T1-RE3
- 型號:
- SIR164DP-T1-RE3
- 描述:
- MOSFET N-CH 30V 50A POWERPAKSO-8
- 庫存數量:
- 54141 Pieces
- 發貨時間:
- 1-2 days (We have stocks to ship now)
- 生產時間:
- 4-8 weeks
簡單介紹
We can supply SIR164DP-T1-RE3, use the request quote form to request SIR164DP-T1-RE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIR164DP-T1-RE3.The price and lead time for SIR164DP-T1-RE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIR164DP-T1-RE3.We look forward to working with you to establish long-term relations of cooperation
產品特性
| 內部型號 | RO-SIR164DP-T1-RE3 |
|---|---|
| 狀況 | Original New |
| 原產地 | Contact us |
| 頂部標記 | email us |
| 替代 | See datasheet |
| VGS（TH）（最大）@標識: | 2.5V @ 250µA |
| Vgs（最大）: | ±20V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PowerPAK® SO-8 |
| 系列: | TrenchFET® Gen III |
| RDS（ON）（最大值）@標識，柵極電壓: | 2.5 mOhm @ 15A, 10V |
| 功率耗散（最大）: | 69W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | PowerPAK® SO-8 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 輸入電容（Ciss）（Max）@ Vds: | 3950pF @ 15V |
| 柵極電荷（Qg）（Max）@ Vgs: | 123nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 驅動電壓（最大Rds開，最小Rds開）: | 4.5V, 10V |
| 漏極至源極電壓（Vdss）: | 30V |
| 詳細說明: | N-Channel 30V 50A (Tc) 69W (Tc) Surface Mount PowerPAK® SO-8 |
| 電流 - 25°C連續排水（Id）: | 50A (Tc) |
| Email: | [email protected] |
SIR164DP-T1-RE3的相似型號
最新資訊
- ADI与宝马集团合作推出业界领先的10Mb车载以太网技术，开启软件定义汽车新篇章
- Vishay推出旋钮电位器，简化工业和音频应用设计并优化成本
- 东芝推出带有嵌入式微控制器的SmartMCD系列栅极驱动IC
- ADI部署SambaNova套件，推动生成式AI在企业级实现突破
- 霍尼韦尔与ADI携手推动楼宇自动化创新变革
- Maxim 宣布推出 2.5V至5.5V、3A可逆升/降压调节器 Continua MAX38889
- MAXIM推出集成USB充电枚举器的汽车DC-DC转换器MAX16984
- RENESAS电子推出业界首款实现无传感器无刷直流电机零速度全扭矩的可编程电机驱动器IC
- RENESAS推出第一代32位RISC-V CPU内核
- Vishay推出的新款10 MBd低功耗光耦，供电电流低至5 mA，电压范围2.7 V至5.5 V
- Melexis推出新款智能分流器解决方案，融入可靠的安全性
- 东芝开发出业界首款2200V双碳化硅（SiC）MOSFET模块，助力工业设备的高效率和小型化