SIHB12N65E-GE3
- 型號:
- SIHB12N65E-GE3
- 描述:
- MOSFET N-CH 650V 12A D2PAK
- RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 57274 Pieces
- 發貨時間:
- 1-2 days (We have stocks to ship now)
- 生產時間:
- 4-8 weeks
簡單介紹
We can supply SIHB12N65E-GE3, use the request quote form to request SIHB12N65E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB12N65E-GE3.The price and lead time for SIHB12N65E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB12N65E-GE3.We look forward to working with you to establish long-term relations of cooperation
產品特性
| 內部型號 | RO-SIHB12N65E-GE3 |
|---|---|
| 狀況 | Original New |
| 原產地 | Contact us |
| 頂部標記 | email us |
| 替代 | See datasheet |
| 電壓 - 測試: | 1224pF @ 100V |
| 電壓 - 擊穿: | D²PAK (TO-263) |
| VGS（TH）（最大）@標識: | 380 mOhm @ 6A, 10V |
| 技術: | MOSFET (Metal Oxide) |
| 系列: | - |
| RoHS狀態: | Tape & Reel (TR) |
| RDS（ON）（最大值）@標識，柵極電壓: | 12A (Tc) |
| 極化: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 19 Weeks |
| 製造商零件編號: | SIHB12N65E-GE3 |
| 輸入電容（Ciss）（Max）@ Vds: | 70nC @ 10V |
| 柵極電荷（Qg）（Max）@ Vgs: | 4V @ 250µA |
| FET特點: | N-Channel |
| 展開說明: | N-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263) |
| 漏極至源極電壓（Vdss）: | - |
| 描述: | MOSFET N-CH 650V 12A D2PAK |
| 電流 - 25°C連續排水（Id）: | 650V |
| 電容比: | 156W (Tc) |
| Email: | [email protected] |
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