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首  頁 > 產品展示 > 分立半導體產品 > 晶體管 - FET，MOSFET - 陣列 > SI7872DP-T1-GE3
SI7872DP-T1-GE3
SI7872DP-T1-GE3
型號:
SI7872DP-T1-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET 2N-CH 30V 6.4A PPAK SO-8
RoHS狀態:
無鉛/符合RoHS
庫存數量:
45753 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
SI7872DP-T1-GE3.pdf
在線詢價

簡單介紹

We can supply SI7872DP-T1-GE3, use the request quote form to request SI7872DP-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI7872DP-T1-GE3.The price and lead time for SI7872DP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI7872DP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SI7872DP-T1-GE3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS（TH）（最大）@標識:3V @ 250µA
供應商設備封裝:PowerPAK® SO-8 Dual
系列:LITTLE FOOT®
RDS（ON）（最大值）@標識，柵極電壓:22 mOhm @ 7.5A, 10V
功率 - 最大:1.4W
封装:Tape & Reel (TR)
封裝/箱體:PowerPAK® SO-8 Dual
其他名稱:SI7872DP-T1-GE3TR
SI7872DPT1GE3
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級（MSL）:1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容（Ciss）（Max）@ Vds:-
柵極電荷（Qg）（Max）@ Vgs:11nC @ 4.5V
FET型:2 N-Channel (Half Bridge)
FET特點:Logic Level Gate
漏極至源極電壓（Vdss）:30V
詳細說明:Mosfet Array 2 N-Channel (Half Bridge) 30V 6.4A 1.4W Surface Mount PowerPAK® SO-8 Dual
電流 - 25°C連續排水（Id）:6.4A
基礎部件號:SI7872
Email:[email protected]

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