SI4569DY-T1-GE3
型號:
SI4569DY-T1-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET N/P-CH 40V 7.6A 8-SOIC
RoHS狀態:
無鉛/符合RoHS
庫存數量:
77812 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
SI4569DY-T1-GE3.pdf

簡單介紹

We can supply SI4569DY-T1-GE3, use the request quote form to request SI4569DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4569DY-T1-GE3.The price and lead time for SI4569DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4569DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SI4569DY-T1-GE3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:2V @ 250µA
供應商設備封裝:8-SO
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:27 mOhm @ 6A, 10V
功率 - 最大:3.1W, 3.2W
封装:Tape & Reel (TR)
封裝/箱體:8-SOIC (0.154", 3.90mm Width)
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:855pF @ 20V
柵極電荷(Qg)(Max)@ Vgs:32nC @ 10V
FET型:N and P-Channel
FET特點:Standard
漏極至源極電壓(Vdss):40V
詳細說明:Mosfet Array N and P-Channel 40V 7.6A, 7.9A 3.1W, 3.2W Surface Mount 8-SO
電流 - 25°C連續排水(Id):7.6A, 7.9A
基礎部件號:SI4569
Email:[email protected]

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