SCT3022ALGC11
SCT3022ALGC11
型號:
SCT3022ALGC11
製造商:
LAPIS Semiconductor
描述:
MOSFET NCH 650V 93A TO247N
RoHS狀態:
無鉛/符合RoHS
庫存數量:
42396 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
1.SCT3022ALGC11.pdf2.SCT3022ALGC11.pdf

簡單介紹

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產品特性

內部型號 RO-SCT3022ALGC11
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:5.6V @ 18.2mA
Vgs(最大):+22V, -4V
技術:SiCFET (Silicon Carbide)
供應商設備封裝:TO-247N
系列:-
RDS(ON)(最大值)@標識,柵極電壓:28.6 mOhm @ 36A, 18V
功率耗散(最大):339W (Tc)
封装:Tube
封裝/箱體:TO-247-3
工作溫度:175°C (TJ)
安裝類型:Through Hole
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:2208pF @ 500V
柵極電荷(Qg)(Max)@ Vgs:133nC @ 18V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):18V
漏極至源極電壓(Vdss):650V
詳細說明:N-Channel 650V 93A (Tc) 339W (Tc) Through Hole TO-247N
電流 - 25°C連續排水(Id):93A (Tc)
Email:[email protected]

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