IXDP35N60B
- 型號:
- IXDP35N60B
- 製造商:
- IXYS Corporation
- 描述:
- IGBT 600V 60A 250W TO220AB
- RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 35942 Pieces
- 發貨時間:
- 1-2 days (We have stocks to ship now)
- 生產時間:
- 4-8 weeks
- 數據表:
- IXDP35N60B.pdf
簡單介紹
We can supply IXDP35N60B, use the request quote form to request IXDP35N60B pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXDP35N60B.The price and lead time for IXDP35N60B depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXDP35N60B.We look forward to working with you to establish long-term relations of cooperation
產品特性
| 內部型號 | RO-IXDP35N60B |
|---|---|
| 狀況 | Original New |
| 原產地 | Contact us |
| 頂部標記 | email us |
| 替代 | See datasheet |
| 電壓 - 集電極發射極擊穿（最大）: | 600V |
| 的VCE（on）（最大）@ VGE，IC: | 2.7V @ 15V, 35A |
| 測試條件: | 300V, 35A, 10 Ohm, 15V |
| Td（開/關）@ 25°C: | - |
| 開關能量: | 1.6mJ (on), 800µJ (off) |
| 供應商設備封裝: | TO-220AB |
| 系列: | - |
| 功率 - 最大: | 250W |
| 封装: | Tube |
| 封裝/箱體: | TO-220-3 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度等級（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 32 Weeks |
| 無鉛狀態/ RoHS狀態: | Lead free / RoHS Compliant |
| 輸入類型: | Standard |
| IGBT類型: | NPT |
| 柵極電荷: | 120nC |
| 詳細說明: | IGBT NPT 600V 60A 250W Through Hole TO-220AB |
| 電流 - 集電極脈衝（ICM）: | 70A |
| 電流 - 集電極（Ic）（最大）: | 60A |
| 基礎部件號: | IXD*35N60 |
| Email: | [email protected] |
IXDP35N60B的相似型號
最新資訊
- 东芝推出带有嵌入式微控制器的SmartMCD系列栅极驱动IC
- ADI部署SambaNova套件，推动生成式AI在企业级实现突破
- 霍尼韦尔与ADI携手推动楼宇自动化创新变革
- Maxim 宣布推出 2.5V至5.5V、3A可逆升/降压调节器 Continua MAX38889
- MAXIM推出集成USB充电枚举器的汽车DC-DC转换器MAX16984
- RENESAS电子推出业界首款实现无传感器无刷直流电机零速度全扭矩的可编程电机驱动器IC
- RENESAS推出第一代32位RISC-V CPU内核
- Vishay推出的新款10 MBd低功耗光耦，供电电流低至5 mA，电压范围2.7 V至5.5 V
- Melexis推出新款智能分流器解决方案，融入可靠的安全性
- 东芝开发出业界首款2200V双碳化硅（SiC）MOSFET模块，助力工业设备的高效率和小型化
- DDR5 时代来临，新挑战不可忽视
- Renesas公开下一代车用SoC和MCU处理器产品路线图