DF23MR12W1M1B11BOMA1
型號:
DF23MR12W1M1B11BOMA1
製造商:
International Rectifier (Infineon Technologies)
描述:
MOSFET MODULE 1200V 25A
RoHS狀態:
無鉛/符合RoHS
庫存數量:
36996 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
DF23MR12W1M1B11BOMA1.pdf

簡單介紹

We can supply DF23MR12W1M1B11BOMA1, use the request quote form to request DF23MR12W1M1B11BOMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DF23MR12W1M1B11BOMA1.The price and lead time for DF23MR12W1M1B11BOMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DF23MR12W1M1B11BOMA1.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-DF23MR12W1M1B11BOMA1
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:5.5V @ 10mA
供應商設備封裝:Module
系列:CoolSiC™
RDS(ON)(最大值)@標識,柵極電壓:45 mOhm @ 25A, 15V
功率 - 最大:20mW
封裝/箱體:Module
其他名稱:SP001602244
工作溫度:-40°C ~ 150°C (TJ)
安裝類型:Chassis Mount
濕度敏感度等級(MSL):Not Applicable
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:2000pF @ 800V
柵極電荷(Qg)(Max)@ Vgs:620nC @ 15V
FET型:2 N-Channel (Dual)
FET特點:Silicon Carbide (SiC)
漏極至源極電壓(Vdss):1200V (1.2kV)
詳細說明:Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 25A 20mW Chassis Mount Module
電流 - 25°C連續排水(Id):25A
Email:[email protected]

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