NTLJS1102PTAG
NTLJS1102PTAG
Artikelnummer:
NTLJS1102PTAG
Tillverkare:
ON Semiconductor
Beskrivning:
MOSFET P-CH 8V 3.7A 6-WDFN
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
83165 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
NTLJS1102PTAG.pdf

Introduktion

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Specifikationer

Internt delnummer RO-NTLJS1102PTAG
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:720mV @ 250µA
Vgs (Max):±6V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:6-WDFN (2x2)
Serier:-
Rds On (Max) @ Id, Vgs:36 mOhm @ 6.2A, 4.5V
Effektdissipation (Max):700mW (Ta)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:6-WDFN Exposed Pad
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:1585pF @ 4V
Gate Laddning (Qg) (Max) @ Vgs:25nC @ 4.5V
FET-typ:P-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):1.2V, 4.5V
Avlopp till källspänning (Vdss):8V
detaljerad beskrivning:P-Channel 8V 3.7A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:3.7A (Ta)
Email:[email protected]

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