BSM180D12P3C007
BSM180D12P3C007
Artikelnummer:
BSM180D12P3C007
Tillverkare:
LAPIS Semiconductor
Beskrivning:
SIC POWER MODULE
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
77791 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
1.BSM180D12P3C007.pdf2.BSM180D12P3C007.pdf

Introduktion

We can supply BSM180D12P3C007, use the request quote form to request BSM180D12P3C007 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BSM180D12P3C007.The price and lead time for BSM180D12P3C007 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# BSM180D12P3C007.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Internt delnummer RO-BSM180D12P3C007
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:5.6V @ 50mA
Leverantörs Device Package:Module
Serier:-
Rds On (Max) @ Id, Vgs:-
Effekt - Max:880W
Förpackning:Bulk
Förpackning / Fodral:Module
Andra namn:Q9597863
Driftstemperatur:175°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Tillverkarens normala ledtid:32 Weeks
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:900pF @ 10V
Gate Laddning (Qg) (Max) @ Vgs:-
FET-typ:2 N-Channel (Dual)
FET-funktionen:Silicon Carbide (SiC)
Avlopp till källspänning (Vdss):1200V (1.2kV)
detaljerad beskrivning:Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 180A (Tc) 880W Surface Mount Module
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:180A (Tc)
Email:[email protected]

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