Numero ng Panloob na Bahagi | RO-SIHU4N80E-GE3 |
---|---|
Kondisyon | Original New |
Bansa Pinagmulan | Contact us |
Nangungunang Marking | email us |
Kapalit | See datasheet |
Vgs (th) (Max) @ Id: | 4V @ 250µA |
Vgs (Max): | ±30V |
teknolohiya: | MOSFET (Metal Oxide) |
Supplier aparato Package: | IPAK (TO-251) |
serye: | E |
Rds On (Max) @ Id, Vgs: | 1.27 Ohm @ 2A, 10V |
Power pagwawaldas (Max): | 69W (Tc) |
packaging: | Tube |
Package / Kaso: | TO-251-3 Long Leads, IPak, TO-251AB |
operating Temperature: | -55°C ~ 150°C (TJ) |
Salalayan Type: | Through Hole |
Ang Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Libreng Status / Katayuan ng RoHS: | Lead free / RoHS Compliant |
Input Kapasidad (Ciss) (Max) @ Vds: | 622pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Type FET: | N-Channel |
FET Tampok: | - |
Drive Boltahe (Max Rds On, Min Rds On): | 10V |
Alisan ng tubig sa Source Boltahe (Vdss): | 800V |
Detalyadong Paglalarawan: | N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251) |
Current - Ang patuloy Drain (Id) @ 25 ° C: | 4.3A (Tc) |
Email: | [email protected] |