Intern onderdeelnummer | RO-TK65S04N1L,LQ |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 2.5V @ 300µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | DPAK+ |
Serie: | U-MOSVIII-H |
Rds On (Max) @ Id, VGS: | 4.3 mOhm @ 32.5A, 10V |
Vermogensverlies (Max): | 107W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Andere namen: | TK65S04N1L,LQ(O TK65S04N1LLQTR |
Temperatuur: | 175°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 2550pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
Drain naar de Bron Voltage (Vdss): | 40V |
gedetailleerde beschrijving: | N-Channel 40V 65A (Ta) 107W (Tc) Surface Mount DPAK+ |
Current - Continuous Drain (Id) @ 25 ° C: | 65A (Ta) |
Email: | [email protected] |