Intern onderdeelnummer | RO-SIRC18DP-T1-GE3 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 2.4V @ 250µA |
Vgs (Max): | +20V, -16V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PowerPAK® SO-8 |
Serie: | TrenchFET® Gen IV |
Rds On (Max) @ Id, VGS: | 1.1 mOhm @ 15A, 10V |
Vermogensverlies (Max): | 54.3W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | PowerPAK® SO-8 |
Andere namen: | SIRC18DP-T1-GE3TR |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 32 Weeks |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 5060pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 111nC @ 10V |
FET Type: | N-Channel |
FET Feature: | Schottky Diode (Body) |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 30V |
gedetailleerde beschrijving: | N-Channel 30V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8 |
Current - Continuous Drain (Id) @ 25 ° C: | 60A (Tc) |
Email: | [email protected] |