SIRA58ADP-T1-RE3
SIRA58ADP-T1-RE3
Onderdeel nummer:
SIRA58ADP-T1-RE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 40V
RoHS-status:
Loodvrij / RoHS-conform
hoeveelheid in voorraad:
65291 Pieces
Aflevertijd:
1-2 days (We have stocks to ship now)
Productie tijd:
4-8 weeks
Data papier:
SIRA58ADP-T1-RE3.pdf

Invoering

We can supply SIRA58ADP-T1-RE3, use the request quote form to request SIRA58ADP-T1-RE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIRA58ADP-T1-RE3.The price and lead time for SIRA58ADP-T1-RE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIRA58ADP-T1-RE3.We look forward to working with you to establish long-term relations of cooperation

bestek

Intern onderdeelnummer RO-SIRA58ADP-T1-RE3
Staat Original New
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Vervanging See datasheet
VGS (th) (Max) @ Id:2.4V @ 250µA
Vgs (Max):+20V, -16V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:PowerPAK® SO-8
Serie:TrenchFET® Gen IV
Rds On (Max) @ Id, VGS:2.65 mOhm @ 15A, 10V
Vermogensverlies (Max):5W (Ta), 56.8W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:PowerPAK® SO-8
Andere namen:SIRA58ADP-T1-RE3TR
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3030pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:61nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):4.5V, 10V
Drain naar de Bron Voltage (Vdss):40V
gedetailleerde beschrijving:N-Channel 40V 32.3A (Ta), 109A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25 ° C:32.3A (Ta), 109A (Tc)
Email:[email protected]

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