SI7998DP-T1-GE3
SI7998DP-T1-GE3
Onderdeel nummer:
SI7998DP-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET 2N-CH 30V 25A PPAK SO-8
RoHS-status:
Loodvrij / RoHS-conform
hoeveelheid in voorraad:
34537 Pieces
Aflevertijd:
1-2 days (We have stocks to ship now)
Productie tijd:
4-8 weeks
Data papier:
SI7998DP-T1-GE3.pdf

Invoering

We can supply SI7998DP-T1-GE3, use the request quote form to request SI7998DP-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI7998DP-T1-GE3.The price and lead time for SI7998DP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI7998DP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Intern onderdeelnummer RO-SI7998DP-T1-GE3
Staat Original New
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Vervanging See datasheet
VGS (th) (Max) @ Id:2.5V @ 250µA
Leverancier Device Pakket:PowerPAK® SO-8 Dual
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:9.3 mOhm @ 15A, 10V
Vermogen - Max:22W, 40W
Packaging:Cut Tape (CT)
Verpakking / doos:PowerPAK® SO-8 Dual
Andere namen:SI7998DP-T1-GE3CT
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain naar de Bron Voltage (Vdss):30V
gedetailleerde beschrijving:Mosfet Array 2 N-Channel (Dual) 30V 25A, 30A 22W, 40W Surface Mount PowerPAK® SO-8 Dual
Current - Continuous Drain (Id) @ 25 ° C:25A, 30A
Email:[email protected]

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