Intern onderdeelnummer | RO-SI7956DP-T1-GE3 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 4V @ 250µA |
Leverancier Device Pakket: | PowerPAK® SO-8 Dual |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 105 mOhm @ 4.1A, 10V |
Vermogen - Max: | 1.4W |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | PowerPAK® SO-8 Dual |
Andere namen: | SI7956DP-T1-GE3TR SI7956DPT1GE3 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 33 Weeks |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain naar de Bron Voltage (Vdss): | 150V |
gedetailleerde beschrijving: | Mosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual |
Current - Continuous Drain (Id) @ 25 ° C: | 2.6A |
Base Part Number: | SI7956 |
Email: | [email protected] |