Intern onderdeelnummer | RO-NDD03N50Z-1G |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 4.5V @ 50µA |
Vgs (Max): | ±30V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | I-PAK |
Serie: | - |
Rds On (Max) @ Id, VGS: | 3.3 Ohm @ 1.15A, 10V |
Vermogensverlies (Max): | 58W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-251-3 Short Leads, IPak, TO-251AA |
Andere namen: | NDD03N50Z-1G-ND NDD03N50Z-1GOS NDD03N50Z1G |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 274pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
Drain naar de Bron Voltage (Vdss): | 500V |
gedetailleerde beschrijving: | N-Channel 500V 2.6A (Tc) 58W (Tc) Through Hole I-PAK |
Current - Continuous Drain (Id) @ 25 ° C: | 2.6A (Tc) |
Email: | [email protected] |