Intern onderdeelnummer | RO-2N5551RLRA |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
Spanning - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
transistor Type: | NPN |
Leverancier Device Pakket: | TO-92-3 |
Serie: | - |
Vermogen - Max: | 625mW |
Packaging: | Cut Tape (CT) |
Verpakking / doos: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Andere namen: | 2N5551RLRAOSCT |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Contains lead / RoHS non-compliant |
Frequentie - Transition: | 300MHz |
gedetailleerde beschrijving: | Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92-3 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
Current - Collector (Ic) (Max): | 600mA |
Base Part Number: | 2N5551 |
Email: | [email protected] |