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TOSHIBA's new 150V N -channel power MOSFET has the industry's leading low -channel resistance and improved reverse recovery characteristics, which helps improve the efficiency of power supply

  • Author:ROGER
  • Release on:2023-04-11

Toshiba Electronic Component and Storage Device Co., Ltd. ("Toshiba") announced today that the launch of 150V N-channel power MOSFET --- "TPH9R00CQ5", which uses the latest generation [1] U-MOSX-H process, can be used for industrial equipment switching power supply power supply, Cover power applications such as data centers and communication base stations.The product has begun to support batch shipments today.

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TPH9R00CQ5 has the industry -leading [2] 9.0MΩ (maximum value) low -leakage source conduction resistance, which is about 42%compared with Toshiba's existing product "TPH1500CNH1 [3]".At the same time, compared with Toshiba's existing product "TPH9R00CQH4 [4]", the reverse recovery charge is reduced by about 74%, and the reverse recovery [5] time is shortened by about 44%.Key reverse recovery indicators.New products are facing synchronous rectification applications [6], which reduces the power loss of the switching power supply and helps improve the efficiency of the system.In addition, compared with TPH9R00CQH, the new product reduces the peak voltage generated during the switching process, which helps reduce the power supply EMI.

This product is encapsulated by the industry's widely recognized surface sticker SOP Advance (N).

In addition, Toshiba also provides related tools that support switching power supply circuits.In addition to the G0 SPICE model that can quickly verify the circuit function, it also provides high -precision G2 SPICE models that can accurately reproduce the transient characteristics of the circuit.

Toshiba used the product to develop "1KW non-isolation Buck-Buost DC-DC converter for communication equipment" and "3-phase multi-level inverter with MOSFET".From now on, you can visit the official website of Dongzhi to get the above reference design.In addition, new products can also be used for the reference design of the "1KW full bridge DC-DC converter".

Toshiba will continue to expand its power MOSFET product line to reduce power loss, improve power efficiency, and help improve equipment efficiency.

application

-Profeed in industrial equipment, such as the power supply for data centers and communication base stations

-Switzer power supply (high-efficiency DC-DC converter, etc.)

characteristic

-The industry leading [2] low -guide resistance: RDS (on) = 9.0MΩ (maximum value) (VGS = 10V)

-The industry-leading [2] low reverse recovery charge: QRR = 34nc (typical value) (-DIDR/DT = 100A/μs)

-The industry-leading [2] Quick reverse recovery time: TRR = 40ns (typical values) (-DIDR/DT = 100A/μs)

-Hey -rated knot temperature: TCH (maximum value) = 175 ℃

Main specification

(Unless there are other instructions, ta = 25 ℃)

Device model

TPH9R00CQ5

Absolutely the greatest

Rated value

Discontinue-source voltage VDSS (V)

150

Discover current (DC) ID (A)

TC = 25 ℃

64

TCH (℃)

175

Electrical characteristics

Discovery-source drive resistance

RDS (on) maximum value (mΩ)

VGS = 10V

9.0

Vgs = 8V

11.0

Typical values of total grid charge QG (NC)

44

Garst switch charge QSW typical value (NC)

11.7

Output charge QOSS typical value (NC)

87

Input CISS Typical Value (PF)

3500

Inverse recovery time TRR typical value (NS)

-didr/dt = 100A/μs

40

Rebelling charge QRR typical value (NC)

34

Encapsulate

name

SOP Advance (N)

Typical value (MM)

4.9 × 6.1 × 1.0

Inventory query and purchase

buy online

Reference design: "1KW non-isolated Buck-Buost DC-DC converter for communication equipment"

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Reference design: "3 -phase multi -level inverter of MOSFET"

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Note:

[1] Data as of March 2023.

[2] As of March 2023, compared with other 150V products.Toshiba survey.

[3] 150V products using the current generation of U-Mosviii-H process.

[4] The product adopts the same production process as the TPH9R00CQ5, and has the same voltage and drive resistance.

[5] MOSFET diode switches from positive bias to reverse bias switch movements.

[6] If the new product is used for circuits that do not perform reverse recovery operations, the power consumption is equivalent to the level of TPH9R00CQH.