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TPN2R304PL,L1Q
- Part Number:
- TPN2R304PL,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- MOSFET N-CH 40V 80A TSON
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 48233 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- TPN2R304PL,L1Q.pdf
Introduction
Specifications
| Internal Part Number | RO-TPN2R304PL,L1Q |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 2.4V @ 0.3mA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
| Series: | U-MOSIX-H |
| Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 40A, 10V |
| Power Dissipation (Max): | 630mW (Ta), 104W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 8-PowerVDFN |
| Other Names: | TPN2R304PL,L1Q(M TPN2R304PLL1QTR |
| Operating Temperature: | 175°C |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 40V |
| Detailed Description: | N-Channel 40V 80A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Email: | [email protected] |
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