RN2427TE85LF
Part Number:
RN2427TE85LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS PNP 200MW SMINI
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
83100 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
RN2427TE85LF.pdf

Introduction

ROGER-TECH is the stocking distributor for RN2427TE85LF, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for RN2427TE85LF by email, we will give you a best price according your plan.
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Specifications

Internal Part Number RO-RN2427TE85LF
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 50mA
Transistor Type:PNP - Pre-Biased
Supplier Device Package:S-Mini
Series:-
Resistor - Emitter Base (R2):10 kOhms
Resistor - Base (R1):2.2 kOhms
Power - Max:200mW
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:RN2427(TE85L,F)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:11 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:200MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 800mA 200MHz 200mW Surface Mount S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 100mA, 1V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):800mA
Email:[email protected]

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