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ECF840AAACN-C1-Y3
- Part Number:
- ECF840AAACN-C1-Y3
- Manufacturer:
- Micron Technology
- Description:
- IC DRAM 8G PARALLEL
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 30483 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- ECF840AAACN-C1-Y3.pdf
Introduction
Specifications
| Internal Part Number | RO-ECF840AAACN-C1-Y3 |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Write Cycle Time - Word, Page: | - |
| Voltage - Supply: | 1.14 V ~ 1.95 V |
| Technology: | SDRAM - Mobile LPDDR3 |
| Series: | - |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Memory Type: | Volatile |
| Memory Size: | 8Gb (512M x 16) |
| Memory Interface: | Parallel |
| Memory Format: | DRAM |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | SDRAM - Mobile LPDDR3 Memory IC 8Gb (512M x 16) Parallel |
| Email: | [email protected] |
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