TK7J90E,S1E
TK7J90E,S1E
Nomor bagian:
TK7J90E,S1E
Pabrikan:
Toshiba Semiconductor and Storage
Deskripsi:
MOSFET N-CH 900V TO-3PN
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
53999 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
TK7J90E,S1E.pdf

pengantar

We can supply TK7J90E,S1E, use the request quote form to request TK7J90E,S1E pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK7J90E,S1E.The price and lead time for TK7J90E,S1E depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK7J90E,S1E.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Nomor Bagian Internal RO-TK7J90E,S1E
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:4V @ 700µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-3P(N)
Seri:π-MOSVIII
Rds Pada (Max) @ Id, Vgs:2 Ohm @ 3.5A, 10V
Power Disipasi (Max):200W (Tc)
Pengemasan:Tube
Paket / Case:TO-3P-3, SC-65-3
Nama lain:TK7J90E,S1E(S
TK7J90ES1E
Suhu Operasional:150°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:1350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:32nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):900V
Detil Deskripsi:N-Channel 900V 7A (Ta) 200W (Tc) Through Hole TO-3P(N)
Current - Continuous Drain (Id) @ 25 ° C:7A (Ta)
Email:[email protected]

Cepat Permintaan Penawaran

Nomor bagian
Kuantitas
Perusahaan
E-mail
Telepon
Komentar