Nomor Bagian Internal | RO-SIHD5N50D-GE3 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Tegangan - Uji: | 325pF @ 100V |
Tegangan - Breakdown: | TO-252AA |
Vgs (th) (Max) @ Id: | 1.5 Ohm @ 2.5A, 10V |
Teknologi: | MOSFET (Metal Oxide) |
Seri: | - |
Status RoHS: | Tape & Reel (TR) |
Rds Pada (Max) @ Id, Vgs: | 5.3A (Tc) |
Polarisasi: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Nama lain: | SIHD5N50D-GE3TR SIHD5N50DGE3 |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
Nomor Bagian Produsen: | SIHD5N50D-GE3 |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 20nC @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 5V @ 250µA |
Fitur FET: | N-Channel |
Deskripsi yang Diperluas: | N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount TO-252AA |
Tiriskan untuk Sumber Tegangan (Vdss): | - |
Deskripsi: | MOSFET N-CH 500V 5.3A TO252 DPK |
Current - Continuous Drain (Id) @ 25 ° C: | 500V |
kapasitansi Ratio: | 104W (Tc) |
Email: | [email protected] |