IXTP3N100D2
IXTP3N100D2
Nomor bagian:
IXTP3N100D2
Pabrikan:
IXYS Corporation
Deskripsi:
MOSFET N-CH 1000V 3A TO220AB
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
48579 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
IXTP3N100D2.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-IXTP3N100D2
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:-
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-220AB
Seri:-
Rds Pada (Max) @ Id, Vgs:5.5 Ohm @ 1.5A, 0V
Power Disipasi (Max):125W (Tc)
Pengemasan:Tube
Paket / Case:TO-220-3
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:24 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:1020pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:37.5nC @ 5V
FET Jenis:N-Channel
Fitur FET:Depletion Mode
Drive Voltage (Max Rds On, Min RDS Aktif):-
Tiriskan untuk Sumber Tegangan (Vdss):1000V
Detil Deskripsi:N-Channel 1000V 3A (Tc) 125W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25 ° C:3A (Tc)
Email:[email protected]

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