IXTF6N200P3
Nomor bagian:
IXTF6N200P3
Pabrikan:
IXYS Corporation
Deskripsi:
MOSFET N-CH
Jumlah dalam Stok:
78940 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
IXTF6N200P3.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-IXTF6N200P3
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:ISOPLUS i4-PAC™
Seri:Polar™
Rds Pada (Max) @ Id, Vgs:4.2 Ohm @ 3A, 10V
Power Disipasi (Max):215W (Tc)
Paket / Case:ISOPLUSi5-Pak™
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Manufacturer Standard Lead Time:24 Weeks
Kapasitansi Masukan (Ciss) (Max) @ VDS:3700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:143nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):2000V
Detil Deskripsi:N-Channel 2000V 4A (Tc) 215W (Tc) Through Hole ISOPLUS i4-PAC™
Current - Continuous Drain (Id) @ 25 ° C:4A (Tc)
Email:[email protected]

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