IXFP22N65X2M
IXFP22N65X2M
Nomor bagian:
IXFP22N65X2M
Pabrikan:
IXYS Corporation
Deskripsi:
MOSFET N-CH
Jumlah dalam Stok:
49822 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
IXFP22N65X2M.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-IXFP22N65X2M
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:5V @ 1.5mA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-220 Isolated Tab
Seri:HiPerFET™
Rds Pada (Max) @ Id, Vgs:145 mOhm @ 11A, 10V
Power Disipasi (Max):37W (Tc)
Paket / Case:TO-220-3 Full Pack, Isolated Tab
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Manufacturer Standard Lead Time:24 Weeks
Kapasitansi Masukan (Ciss) (Max) @ VDS:2190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:37nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):650V
Detil Deskripsi:N-Channel 650V 22A (Tc) 37W (Tc) Through Hole TO-220 Isolated Tab
Current - Continuous Drain (Id) @ 25 ° C:22A (Tc)
Email:[email protected]

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