FCP190N65F
FCP190N65F
Nomor bagian:
FCP190N65F
Pabrikan:
ON Semiconductor
Deskripsi:
MOSFET N-CH 650V 20.6A TO220-3
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
43323 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
FCP190N65F.pdf

pengantar

We can supply FCP190N65F, use the request quote form to request FCP190N65F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FCP190N65F.The price and lead time for FCP190N65F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FCP190N65F.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Nomor Bagian Internal RO-FCP190N65F
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:5V @ 2mA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-220-3
Seri:FRFET®, SuperFET® II
Rds Pada (Max) @ Id, Vgs:190 mOhm @ 10A, 10V
Power Disipasi (Max):208W (Tc)
Pengemasan:Tube
Paket / Case:TO-220-3
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:3225pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:78nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):650V
Detil Deskripsi:N-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25 ° C:20.6A (Tc)
Email:[email protected]

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