AOT8N65_001
AOT8N65_001
Nomor bagian:
AOT8N65_001
Pabrikan:
Alpha and Omega Semiconductor, Inc.
Deskripsi:
MOSFET N-CH 650V 8A TO220
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
53630 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
AOT8N65_001.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-AOT8N65_001
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-220-3
Seri:-
Rds Pada (Max) @ Id, Vgs:1.15 Ohm @ 4A, 10V
Power Disipasi (Max):208W (Tc)
Pengemasan:Tube
Paket / Case:TO-220-3
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:1400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:28nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):650V
Detil Deskripsi:N-Channel 650V 8A (Tc) 208W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25 ° C:8A (Tc)
Email:[email protected]

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