TH58BVG2S3HTA00
TH58BVG2S3HTA00
Modèle de produit:
TH58BVG2S3HTA00
Fabricant:
Toshiba Memory America, Inc.
La description:
IC FLASH 4G PARALLEL 48TSOP I
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
74161 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
TH58BVG2S3HTA00.pdf

introduction

We can supply TH58BVG2S3HTA00, use the request quote form to request TH58BVG2S3HTA00 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TH58BVG2S3HTA00.The price and lead time for TH58BVG2S3HTA00 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TH58BVG2S3HTA00.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-TH58BVG2S3HTA00
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Écrire le temps de cycle - Word, Page:25ns
Tension - Alimentation:2.7 V ~ 3.6 V
La technologie:FLASH - NAND (SLC)
Package composant fournisseur:48-TSOP I
Séries:Benand™
Emballage:Tray
Package / Boîte:48-TFSOP (0.724", 18.40mm Width)
Autres noms:TH58BVG2S3HTA00B4H
TH58BVG2S3HTA00YCJ
TH58BVG2S3HTA00YCL
Température de fonctionnement:0°C ~ 70°C (TA)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):3 (168 Hours)
Type de mémoire:Non-Volatile
Taille mémoire:4Gb (512M x 8)
Interface mémoire:Parallel
Format de mémoire:FLASH
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Description détaillée:FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 48-TSOP I
Temps d'accès:25ns
Email:[email protected]

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