SQJ446EP-T1_GE3
Modèle de produit:
SQJ446EP-T1_GE3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET N-CH 40V 60A POWERPAKSO-8
la quantité en dépôt:
47443 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
SQJ446EP-T1_GE3.pdf

introduction

We can supply SQJ446EP-T1_GE3, use the request quote form to request SQJ446EP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJ446EP-T1_GE3.The price and lead time for SQJ446EP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJ446EP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-SQJ446EP-T1_GE3
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:PowerPAK® SO-8
Séries:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:5 mOhm @ 14A, 10V
Dissipation de puissance (max):46W (Tc)
Emballage:Tape & Reel (TR)
Package / Boîte:PowerPAK® SO-8
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Surface Mount
Capacité d'entrée (Ciss) (Max) @ Vds:4220pF @ 20V
Charge de la porte (Qg) (Max) @ Vgs:65nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):4.5V, 10V
Tension drain-source (Vdss):40V
Description détaillée:N-Channel 40V 60A (Tc) 46W (Tc) Surface Mount PowerPAK® SO-8
Courant - Drainage continu (Id) à 25 ° C:60A (Tc)
Email:[email protected]

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