SPI100N03S2L03
SPI100N03S2L03
Modèle de produit:
SPI100N03S2L03
Fabricant:
International Rectifier (Infineon Technologies)
La description:
MOSFET N-CH 30V 100A TO-262
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
70536 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
SPI100N03S2L03.pdf

introduction

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Spécifications

Numéro de pièce interne RO-SPI100N03S2L03
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:PG-TO262-3-1
Séries:OptiMOS™
Rds On (Max) @ Id, Vgs:3 mOhm @ 80A, 10V
Dissipation de puissance (max):300W (Tc)
Emballage:Tube
Package / Boîte:TO-262-3 Long Leads, I²Pak, TO-262AA
Autres noms:SP000013491
SPI100N03S2L03X
SPI100N03S2L03X-ND
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:8180pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:220nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):30V
Description détaillée:N-Channel 30V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3-1
Courant - Drainage continu (Id) à 25 ° C:100A (Tc)
Email:[email protected]

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