SPI08N50C3XKSA1
- Modèle de produit:
- SPI08N50C3XKSA1
- La description:
- MOSFET N-CH 560V 7.6A TO-262
- Statut RoHS:
- Sans plomb / conforme à la directive RoHS
- la quantité en dépôt:
- 81133 Pieces
- Heure de livraison:
- 1-2 days (We have stocks to ship now)
- Temps de production:
- 4-8 weeks
- Fiche technique:
- SPI08N50C3XKSA1.pdf
introduction
We can supply SPI08N50C3XKSA1, use the request quote form to request SPI08N50C3XKSA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SPI08N50C3XKSA1.The price and lead time for SPI08N50C3XKSA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SPI08N50C3XKSA1.We look forward to working with you to establish long-term relations of cooperation
Spécifications
| Numéro de pièce interne | RO-SPI08N50C3XKSA1 |
|---|---|
| État | Original New |
| Pays d'origine | Contact us |
| Top Marking | email us |
| Remplacement | See datasheet |
| Vgs (th) (Max) @ Id: | 3.9V @ 350µA |
| Vgs (Max): | ±20V |
| La technologie: | MOSFET (Metal Oxide) |
| Package composant fournisseur: | PG-TO262-3-1 |
| Séries: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4.6A, 10V |
| Dissipation de puissance (max): | 83W (Tc) |
| Emballage: | Tube |
| Package / Boîte: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Autres noms: | SP000680984 SPI08N50C3 SPI08N50C3-ND SPI08N50C3IN SPI08N50C3IN-ND SPI08N50C3X SPI08N50C3XK |
| Température de fonctionnement: | -55°C ~ 150°C (TJ) |
| Type de montage: | Through Hole |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Statut sans plomb / Statut RoHS: | Lead free / RoHS Compliant |
| Capacité d'entrée (Ciss) (Max) @ Vds: | 750pF @ 25V |
| Charge de la porte (Qg) (Max) @ Vgs: | 32nC @ 10V |
| type de FET: | N-Channel |
| Fonction FET: | - |
| Tension d'entraînement (Max Rds activé, Min Rds activé): | 10V |
| Tension drain-source (Vdss): | 560V |
| Description détaillée: | N-Channel 560V 7.6A (Tc) 83W (Tc) Through Hole PG-TO262-3-1 |
| Courant - Drainage continu (Id) à 25 ° C: | 7.6A (Tc) |
| Email: | [email protected] |
