SPB04N60C3ATMA1
- Modèle de produit:
- SPB04N60C3ATMA1
- La description:
- MOSFET N-CH 650V 4.5A D2PAK
- Statut RoHS:
- Sans plomb / conforme à la directive RoHS
- la quantité en dépôt:
- 39996 Pieces
- Heure de livraison:
- 1-2 days (We have stocks to ship now)
- Temps de production:
- 4-8 weeks
- Fiche technique:
- SPB04N60C3ATMA1.pdf
introduction
We can supply SPB04N60C3ATMA1, use the request quote form to request SPB04N60C3ATMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SPB04N60C3ATMA1.The price and lead time for SPB04N60C3ATMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SPB04N60C3ATMA1.We look forward to working with you to establish long-term relations of cooperation
Spécifications
| Numéro de pièce interne | RO-SPB04N60C3ATMA1 |
|---|---|
| État | Original New |
| Pays d'origine | Contact us |
| Top Marking | email us |
| Remplacement | See datasheet |
| Vgs (th) (Max) @ Id: | 3.9V @ 200µA |
| Vgs (Max): | ±20V |
| La technologie: | MOSFET (Metal Oxide) |
| Package composant fournisseur: | PG-TO263-3-2 |
| Séries: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 950 mOhm @ 2.8A, 10V |
| Dissipation de puissance (max): | 50W (Tc) |
| Emballage: | Cut Tape (CT) |
| Package / Boîte: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Autres noms: | SPB04N60C3ATMA1CT SPB04N60C3INCT SPB04N60C3INCT-ND SPB04N60C3XTINCT SPB04N60C3XTINCT-ND |
| Température de fonctionnement: | -55°C ~ 150°C (TJ) |
| Type de montage: | Surface Mount |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Statut sans plomb / Statut RoHS: | Lead free / RoHS Compliant |
| Capacité d'entrée (Ciss) (Max) @ Vds: | 490pF @ 25V |
| Charge de la porte (Qg) (Max) @ Vgs: | 25nC @ 10V |
| type de FET: | N-Channel |
| Fonction FET: | - |
| Tension d'entraînement (Max Rds activé, Min Rds activé): | 10V |
| Tension drain-source (Vdss): | 650V |
| Description détaillée: | N-Channel 650V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO263-3-2 |
| Courant - Drainage continu (Id) à 25 ° C: | 4.5A (Tc) |
| Email: | [email protected] |
