SIHG33N60E-E3
Modèle de produit:
SIHG33N60E-E3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET N-CH 600V 33A TO247AC
la quantité en dépôt:
80203 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
SIHG33N60E-E3.pdf

introduction

We can supply SIHG33N60E-E3, use the request quote form to request SIHG33N60E-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHG33N60E-E3.The price and lead time for SIHG33N60E-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHG33N60E-E3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-SIHG33N60E-E3
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-247AC
Séries:E
Rds On (Max) @ Id, Vgs:99 mOhm @ 16.5A, 10V
Dissipation de puissance (max):278W (Tc)
Package / Boîte:TO-247-3
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Capacité d'entrée (Ciss) (Max) @ Vds:3508pF @ 100V
Charge de la porte (Qg) (Max) @ Vgs:150nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):600V
Description détaillée:N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AC
Courant - Drainage continu (Id) à 25 ° C:33A (Tc)
Email:[email protected]

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