PDTC114YEF,115
PDTC114YEF,115
Modèle de produit:
PDTC114YEF,115
Fabricant:
NXP Semiconductors / Freescale
La description:
TRANS PREBIAS NPN 250MW SC89
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
42295 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
PDTC114YEF,115.pdf

introduction

We can supply PDTC114YEF,115, use the request quote form to request PDTC114YEF,115 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PDTC114YEF,115.The price and lead time for PDTC114YEF,115 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PDTC114YEF,115.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-PDTC114YEF,115
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Transistor Type:NPN - Pre-Biased
Package composant fournisseur:SC-89
Séries:-
Résistance - Base de l'émetteur (R2):47 kOhms
Résistance - Base (R1):10 kOhms
Puissance - Max:250mW
Emballage:Cut Tape (CT)
Package / Boîte:SC-89, SOT-490
Autres noms:568-2142-1
PDTC114YEF115
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Description détaillée:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250mW Surface Mount SC-89
Gain en courant DC (hFE) (Min) @ Ic, Vce:100 @ 5mA, 5V
Courant - Collecteur Cutoff (Max):1µA
Courant - Collecteur (Ic) (max):100mA
Numéro de pièce de base:PDTC114
Email:[email protected]

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