JANTX1N3766
Modèle de produit:
JANTX1N3766
Fabricant:
Microsemi
La description:
DIODE GEN PURP 800V 35A DO203AB
Statut RoHS:
Contient du plomb / Non conforme à RoHS
la quantité en dépôt:
58500 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
JANTX1N3766.pdf

introduction

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Spécifications

Numéro de pièce interne RO-JANTX1N3766
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - Inverse de crête (max):Standard
Tension - directe (Vf) (max) @ Si:35A
Tension - Ventilation:DO-5
Séries:Military, MIL-PRF-19500/297
État RoHS:Bulk
Temps de recouvrement inverse (trr):Standard Recovery >500ns, > 200mA (Io)
Résistance @ Si, F:-
Polarisation:DO-203AB, DO-5, Stud
Autres noms:1086-16813
1086-16813-MIL
Type de montage:Chassis, Stud Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Référence fabricant:JANTX1N3766
Description élargie:Diode Standard 800V 35A Chassis, Stud Mount DO-5
Configuration diode:10µA @ 800V
La description:DIODE GEN PURP 800V 35A DO203AB
Courant - fuite, inverse à Vr:2.3V @ 500A
Courant - Moyen redressé (Io) (par diode):800V
Capacité à Vr, F:-65°C ~ 175°C
Email:[email protected]

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