IXTP160N04T2
IXTP160N04T2
Modèle de produit:
IXTP160N04T2
Fabricant:
IXYS Corporation
La description:
MOSFET N-CH 40V 160A TO-220
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
39033 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
IXTP160N04T2.pdf

introduction

We can supply IXTP160N04T2, use the request quote form to request IXTP160N04T2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTP160N04T2.The price and lead time for IXTP160N04T2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTP160N04T2.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-IXTP160N04T2
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220AB
Séries:TrenchT2™
Rds On (Max) @ Id, Vgs:5 mOhm @ 50A, 10V
Dissipation de puissance (max):250W (Tc)
Emballage:Tube
Package / Boîte:TO-220-3
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:24 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:4640pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:79nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):40V
Description détaillée:N-Channel 40V 160A (Tc) 250W (Tc) Through Hole TO-220AB
Courant - Drainage continu (Id) à 25 ° C:160A (Tc)
Email:[email protected]

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