FDG6303N_G
Modèle de produit:
FDG6303N_G
Fabricant:
ON Semiconductor
La description:
INTEGRATED CIRCUIT
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
87722 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
FDG6303N_G.pdf

introduction

We can supply FDG6303N_G, use the request quote form to request FDG6303N_G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDG6303N_G.The price and lead time for FDG6303N_G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDG6303N_G.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-FDG6303N_G
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:1.5V @ 250µA
Package composant fournisseur:SC-70-6
Séries:-
Rds On (Max) @ Id, Vgs:450 mOhm @ 500mA, 4.5V
Puissance - Max:300mW
Emballage:Bulk
Package / Boîte:6-TSSOP, SC-88, SOT-363
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:50pF @ 10V
Charge de la porte (Qg) (Max) @ Vgs:2.3nC @ 4.5V
type de FET:2 N-Channel (Dual)
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):25V
Description détaillée:Mosfet Array 2 N-Channel (Dual) 25V 500mA 300mW Surface Mount SC-70-6
Courant - Drainage continu (Id) à 25 ° C:500mA
Email:[email protected]

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