FDG6301N-F085P
Modèle de produit:
FDG6301N-F085P
Fabricant:
ON Semiconductor
La description:
DUAL NMOS SC70-6 25V 4OHM
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
83007 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
FDG6301N-F085P.pdf

introduction

We can supply FDG6301N-F085P, use the request quote form to request FDG6301N-F085P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDG6301N-F085P.The price and lead time for FDG6301N-F085P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDG6301N-F085P.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-FDG6301N-F085P
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:1.5V @ 250µA
Package composant fournisseur:SC-70-6
Séries:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:4 Ohm @ 220mA, 4.5V
Puissance - Max:300mW
Package / Boîte:6-TSSOP, SC-88, SOT-363
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:9.5pF @ 10V
Charge de la porte (Qg) (Max) @ Vgs:0.4nC @ 4.5V
type de FET:2 N-Channel (Dual)
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):25V
Description détaillée:Mosfet Array 2 N-Channel (Dual) 25V 220mA (Ta) 300mW Surface Mount SC-70-6
Courant - Drainage continu (Id) à 25 ° C:220mA (Ta)
Email:[email protected]

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