DSE010-TR-E
DSE010-TR-E
Modèle de produit:
DSE010-TR-E
Fabricant:
ON Semiconductor
La description:
DIODE GEN PURP 80V 100MA
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
81968 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
DSE010-TR-E.pdf

introduction

We can supply DSE010-TR-E, use the request quote form to request DSE010-TR-E pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DSE010-TR-E.The price and lead time for DSE010-TR-E depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DSE010-TR-E.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-DSE010-TR-E
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - Inverse de crête (max):Standard
Tension - directe (Vf) (max) @ Si:100mA
Séries:-
État RoHS:Tape & Reel (TR)
Temps de recouvrement inverse (trr):Small Signal =< 200mA (Io), Any Speed
Résistance @ Si, F:3pF @ 0.5V, 1MHz
Polarisation:-
Température d'utilisation - Jonction:4ns
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Référence fabricant:DSE010-TR-E
Description élargie:Diode Standard 80V 100mA
Configuration diode:500nA @ 80V
La description:DIODE GEN PURP 80V 100MA
Courant - fuite, inverse à Vr:1.2V @ 100mA
Courant - Moyen redressé (Io) (par diode):80V
Capacité à Vr, F:-55°C ~ 125°C
Email:[email protected]

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