CUS08F30,H3F
CUS08F30,H3F
Modèle de produit:
CUS08F30,H3F
Fabricant:
Toshiba Semiconductor and Storage
La description:
DIODE SCHOTTKY 30V 800MA USC
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
86822 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
CUS08F30,H3F.pdf

introduction

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Spécifications

Numéro de pièce interne RO-CUS08F30,H3F
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - directe (Vf) (max) @ Si:220mV @ 10mA
Tension - inverse (Vr) (max):30V
Package composant fournisseur:USC
La vitesse:Fast Recovery = 200mA (Io)
Séries:-
Emballage:Tape & Reel (TR)
Package / Boîte:SC-76, SOD-323
Autres noms:CUS08F30,H3F(B
CUS08F30,H3F(T
CUS08F30H3FTR
Température d'utilisation - Jonction:125°C (Max)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:12 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Type de diode:Schottky
Description détaillée:Diode Schottky 30V 800mA Surface Mount USC
Courant - fuite, inverse à Vr:50µA @ 30V
Courant - Rectifié moyenne (Io):800mA
Capacité à Vr, F:170pF @ 0V, 1MHz
Email:[email protected]

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