TSM650N15CR RLG
TSM650N15CR RLG
Artikelnummer:
TSM650N15CR RLG
Hersteller:
TSC (Taiwan Semiconductor)
Beschreibung:
MOSFET N-CH 150V 24A 8PDFN
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
65165 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
TSM650N15CR RLG.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-TSM650N15CR RLG
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-PDFN (5x6)
Serie:-
Rds On (Max) @ Id, Vgs:65 mOhm @ 4A, 10V
Verlustleistung (max):96W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerTDFN
Andere Namen:TSM650N15CR RLGTR
TSM650N15CR RLGTR-ND
TSM650N15CRRLGTR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1829pF @ 75V
Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):6V, 10V
Drain-Source-Spannung (Vdss):150V
detaillierte Beschreibung:N-Channel 150V 24A (Tc) 96W (Tc) Surface Mount 8-PDFN (5x6)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:24A (Tc)
Email:[email protected]

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