TSM055N03EPQ56 RLG
TSM055N03EPQ56 RLG
Artikelnummer:
TSM055N03EPQ56 RLG
Hersteller:
TSC (Taiwan Semiconductor)
Beschreibung:
MOSFET N-CH 30V 80A 8PDFN
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
56937 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
TSM055N03EPQ56 RLG.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-TSM055N03EPQ56 RLG
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-PDFN (5x6)
Serie:-
Rds On (Max) @ Id, Vgs:5.5 mOhm @ 20A, 10V
Verlustleistung (max):74W (Tc)
Verpackung:Original-Reel®
Verpackung / Gehäuse:8-PowerTDFN
Andere Namen:TSM055N03EPQ56 RLGDKR
TSM055N03EPQ56 RLGDKR-ND
TSM055N03EPQ56RLGDKR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:28 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1210pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:11.1nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 80A (Tc) 74W (Tc) Surface Mount 8-PDFN (5x6)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:80A (Tc)
Email:[email protected]

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