Interne Teilenummer | RO-RN1101ACT(TPL3) |
---|---|
Bedingung | Original New |
Herkunftsland | Contact us |
Top-Markierung | email us |
Ersatz | See datasheet |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
VCE Sättigung (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Transistor-Typ: | NPN - Pre-Biased |
Supplier Device-Gehäuse: | CST3 |
Serie: | - |
Widerstand - Emitterbasis (R2): | 4.7 kOhms |
Widerstand - Basis (R1): | 4.7 kOhms |
Leistung - max: | 100mW |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | SC-101, SOT-883 |
Andere Namen: | RN1101ACT (TPL3) RN1101ACT(TPL3)TR |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 30 @ 10mA, 5V |
Strom - Collector Cutoff (Max): | 500nA |
Strom - Kollektor (Ic) (max): | 80mA |
Email: | [email protected] |