QS5U36TR
QS5U36TR
Artikelnummer:
QS5U36TR
Hersteller:
LAPIS Semiconductor
Beschreibung:
MOSFET N-CH 20V 2.5A TSMT5
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
54987 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
1.QS5U36TR.pdf2.QS5U36TR.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-QS5U36TR
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:1.3V @ 1mA
Vgs (Max):±10V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TSMT5
Serie:-
Rds On (Max) @ Id, Vgs:81 mOhm @ 2.5A, 4.5V
Verlustleistung (max):1.25W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SOT-23-5 Thin, TSOT-23-5
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:280pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:3.5nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:Schottky Diode (Isolated)
Antriebsspannung (Max Rds On, Min Rds On):1.5V, 4.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:N-Channel 20V 2.5A (Ta) 1.25W (Ta) Surface Mount TSMT5
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.5A (Ta)
Email:[email protected]

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